Precipitates and defects in silicon co-implanted with helium and oxygen

✍ Scribed by B.S. Li; C.H. Zhang; H.H. Zhang; Y. Zhang; Y.T. Yang; L.Q. Zhang

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 931 KB
• Volume: 269
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2011.02.005

✦ Synopsis

Nano-bubbles or voids introduced by He implantation before the oxygen implantation collect oxygen and increase the oxygen content in the sample. Furthermore, nano-bubbles or voids can trap Si interstitials to decrease the dislocations at the edge of precipitates. The density and shape of precipitates formed in the initial stage of the separation-by-implanted-oxygen process are related to the size and density of Heinduced vacancy-type defects (nano-bubbles and voids). A high density of nano-bubbles is more efficient in gettering than that of a low density of voids.