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Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen

✍ Scribed by P.L.F. Hemment; E.A. Maydell-Ondrusz; J.E. Castle; R. Paynter; M.C. Wilson; R.G. Booker; J.A. Kilner; R.P. Arrowsmith

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Volume changes of silicon thin surface l

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A model for the oxidation of silicon by

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Structure of Oxygen - Implanted Silicon

✍ A. Misiuk; A. Barcz; J. Ratajczak; J. Katcki; J. Bak-Misiuk; L. Bryja; B. Surma; 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 636 KB

Characterization of interstitial oxygen

✍ Fusegawa, I.; Yamagishi, H.; Mori, T.; Takayama, H.; Iino, E.; Takano, K. 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 377 KB

The formation of SiO2 films on silicon b

✍ U. Kreissig; E. Hensel; W. Skorupa; H. Johansen 📂 Article 📅 1982 🏛 Elsevier Science 🌐 English ⚖ 398 KB