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Structure of Oxygen - Implanted Silicon Single Crystals Treated at ≥1400 K under High Argon Pressure

✍ Scribed by A. Misiuk; A. Barcz; J. Ratajczak; J. Katcki; J. Bak-Misiuk; L. Bryja; B. Surma; G. Gawlik


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
636 KB
Volume
36
Category
Article
ISSN
0232-1300

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