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Transformation of radiation defect clusters in B+ ion-implanted silicon

✍ Scribed by Antonova, I. V. ;Shaimeev, S. S.


Publisher
John Wiley and Sons
Year
1996
Tongue
English
Weight
435 KB
Volume
153
Category
Article
ISSN
0031-8965

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High resolution Laplace deep level transient spectroscopy (LDLTS) has been applied to investigate the annealing behaviour of small cluster defects in n-type Si. The Si was implanted with either Ge or Si, with energies 1500 keV and 850 keV respectively, and doses of 1 β€’ 10 10 cm Γ€2 . The low dose ens