Temporal evolution of ion implanted CdSe distribution in SiO2 on silicon during annealing
โ Scribed by I. Grosshans; H. Karl; B. Stritzker
- Book ID
- 113822994
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 345 KB
- Volume
- 219-220
- Category
- Article
- ISSN
- 0168-583X
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๐ SIMILAR VOLUMES
Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)
A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and