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Microstructure evolution of hydrogen-implanted silicon during the annealing process

✍ Scribed by Jing Wang; Qinghua Xiao; Hailing Tu; Beiling Shao; Ansheng Liu

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
795 KB
Volume
66
Category
Article
ISSN
0167-9317

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✦ Synopsis

The microstructure evolution of a hydrogen-implanted Si(111) wafer during annealing was studied using transmission electron microscopy (TEM). In the damaged layer caused by hydrogen implantation before annealing, most defects are platelet-like and are located on (111) planes. A few amorphous clumps and (100) plane defects are also present in the damaged layer. After annealing at 550 8C for 90 min, an amorphous layer is formed on the (111) plane and a micro-crack is generated. It is suggested that the micro-crack originates from the amorphous layer.

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