For (~ochralski-grown silicon, oxygen is the basic impurity, with its concentration exceeding IO Is cm-~. The complexing of oxygen upon heat treatment presents a long-standing challenge to our understanding of the physics of defects in silicon. In this paper the oxygen-related centres generated by l
β¦ LIBER β¦
Metastable species of oxygen-related donors in silicon
β Scribed by D. Wruck; F. Spiegelberg
- Publisher
- John Wiley and Sons
- Year
- 1986
- Tongue
- English
- Weight
- 233 KB
- Volume
- 133
- Category
- Article
- ISSN
- 0370-1972
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