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Electrical and infrared spectroscopic investigations of oxygen-related donors in silicon

✍ Scribed by Wruck, D. ;Gaworzewski, P.

Publisher
John Wiley and Sons
Year
1979
Tongue
English
Weight
545 KB
Volume
56
Category
Article
ISSN
0031-8965

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno