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Differential evaluation of the Hall effect in silicon with oxygen-related donors

✍ Scribed by H. J. Hoffmann; H. Nakayama; T. Nishino; Y. Hamakawa


Publisher
Springer
Year
1984
Tongue
English
Weight
287 KB
Volume
33
Category
Article
ISSN
1432-0630

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πŸ“œ SIMILAR VOLUMES


Hall effect spectroscopy of thermal dono
✍ J. Sicart; F. Vettese; J.L. Robert; S. Cristoloveanu πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 365 KB

The electrical properties of silicon layers formed by imphmtation of oxygen (SIMOX) are controlled by oxygen thermal donors (TDs) which are activated in a high density (lOt-~-lO t~ cm s) during technological processes. It has been found that 650 Β°C is the annealing temperature at which TDs are activ