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The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implantation in gallium arsenide

โœ Scribed by NJ Whitehead; RM Gwilliam; WP Gillin; BJ Sealy


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
257 KB
Volume
39
Category
Article
ISSN
0042-207X

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