The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implantation in gallium arsenide : N. J. Whitehead, R. M. Gwilliam, W. F. Gillin and B. J. Sealy. Vacuum39(11/12), 1149 (1989)

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 236 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(90)90667-c