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The oxygen related donor effect in silicon

✍ Scribed by J.L. Benton; L.C. Kimerling; M. Stavola

Publisher
Elsevier Science
Year
1983
Weight
332 KB
Volume
116
Category
Article
ISSN
0378-4363

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno