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Metal–Oxide–Semiconductor Interface and Dielectric Properties of Atomic Layer Deposited SiO 2 on GaN

✍ Scribed by Takashima, Shinya; Li, Zhongda; Chow, T. Paul

Book ID: 124159184
Publisher: Institute of Pure and Applied Physics
Year: 2013
Tongue: English
Weight: 661 KB
Volume: 52
Category: Article
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.08JN24

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