Metal–Oxide–High- -Oxide–Silicon Memory Device Using a Ti-Doped Charge-Trapping Layer and Blocking Layer

✍ Scribed by Fa-Hsyang Chen; Tung-Ming Pan; Fu-Chien Chiu

• Book ID: 114620699
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 595 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2165285