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The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques : J. S. Uranwala, J. G. Simmons and H. A. Mar. Solid-State Electronics19, 375 (1976)

Publisher: Elsevier Science
Year: 1976
Tongue: English
Weight: 118 KB
Volume: 15
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(76)90706-x

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