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Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device

✍ Scribed by Jong Kyung Park; Youngmin Park; Seok-Hee Lee; Sung Kyu Im; Jae Sub Oh; Moon Sig Joo; Kwon Hong; Byung Jin Cho

No coin nor oath required. For personal study only.

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