Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices

✍ Scribed by Jing Pu; Chan, D.S.H.; Sun-Jung Kim; Byung Jin Cho

• Book ID: 114619785
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 946 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2009.2030834