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Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine

✍ Scribed by Ougazzaden, A.; Le Bellego, Y.; Rao, E. V. K.; Juhel, M.; Leprince, L.; Patriarche, G.

Book ID
120262383
Publisher
American Institute of Physics
Year
1997
Tongue
English
Weight
423 KB
Volume
70
Category
Article
ISSN
0003-6951

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions