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Growth of BGaAs layers on GaAs substrates by metal-organic vapor-phase epitaxy

✍ Scribed by D. A. Pryakhin; V. M. Danil’tsev; Yu. N. Drozdov; M. N. Drozdov; D. M. Gaponova; A. V. Murel’; V. I. Shashkin; S. Rushworth

Book ID
110140901
Publisher
Springer
Year
2005
Tongue
English
Weight
54 KB
Volume
39
Category
Article
ISSN
1063-7826

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions