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Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy

✍ Scribed by H. Ben Naceur; T. Mzoughi; I. Moussa; A. Rebey; B. El Jani

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
575 KB
Volume
268
Category
Article
ISSN
0168-583X

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