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Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

✍ Scribed by M. Niraula; K. Yasuda; T. Ishiguro; Y. Kawauchi; H. Morishita; Y. Agata

Book ID
107452939
Publisher
Springer US
Year
2003
Tongue
English
Weight
106 KB
Volume
32
Category
Article
ISSN
0361-5235

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Selective Growth of Cubic GaN on Pattern
Selective Growth of Cubic GaN on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 180 KB πŸ‘ 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl