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Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems

✍ Scribed by T.F. Kuech

Book ID
107864096
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
630 KB
Volume
216
Category
Article
ISSN
0040-6090

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Growth of Ξ²-Ga2O3on Al2O3and GaAs using
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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions