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Modeling and simulation of metal organic halide vapor phase epitaxy (MOHVPE) growth chamber

✍ Scribed by Zieyana Mohamed Annuar, N.; Sabri, Mohd Faizul Mohd; Shuhaimi Abu Bakar, A.

Book ID
121573076
Publisher
Springer-Verlag
Year
2014
Tongue
English
Weight
723 KB
Volume
21
Category
Article
ISSN
0946-7076

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions