Characterization of GaAs regrowth interfaces grown by metal-organic vapor phase epitaxy
✍ Scribed by Eiji Ikeda; Hideki Hasegawa; Hideo Ohno
- Book ID
- 112078255
- Publisher
- John Wiley and Sons
- Year
- 1988
- Tongue
- English
- Weight
- 658 KB
- Volume
- 71
- Category
- Article
- ISSN
- 8756-663X
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Short wave infrared (SWIR) photovoltaic devices have been fabricated from metal organic vapour phase epitaxially (MOVPE) grown n on p HgCdTe films on GaAs substrates. The MOVPE grown films were processed into mesa type discrete devices with wet chemical etching employed for meas delineation and CdZn
## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas