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Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor

✍ Scribed by Dang, X. Z.; Asbeck, P. M.; Yu, E. T.; Sullivan, G. J.; Chen, M. Y.; McDermott, B. T.; Boutros, K. S.; Redwing, J. M.

Book ID: 125840118
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 251 KB
Volume: 74
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.124214

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