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Material removal model for chemical–mechanical polishing considering wafer flexibility and edge effects

✍ Scribed by Jongwon Seok; Cyriaque P. Sukam; Andrew T. Kim; John A. Tichy; Timothy S. Cale

Book ID
108299351
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
217 KB
Volume
257
Category
Article
ISSN
0043-1648

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✍ J. Xin; W. Cai; J.A. Tichy 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 431 KB

So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical