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Material removal model for non-contact chemical mechanical polishing

✍ Scribed by JianQun Zhang; ChaoHui Zhang

Book ID
107368625
Publisher
Springer
Year
2008
Tongue
English
Weight
627 KB
Volume
53
Category
Article
ISSN
1001-6538

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So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical