✦ LIBER ✦

Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates

✍ Scribed by T Omiya; F Matsukura; A Shen; Y Ohno; H Ohno

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 147 KB
Volume: 10
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(01)00083-2

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

(Ga,Mn)As on patterned GaAs(0 0&#xa

(Ga,Mn)As on patterned GaAs(0 0 1) substrates: Growth and magnetotransport

✍ W. Limmer; J. Daeubler; M. Glunk; T. Hummel; W. Schoch; R. Sauer 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 246 KB

Magnetic anisotropy in (Ga,Mn)As on GaAs

Magnetic anisotropy in (Ga,Mn)As on GaAs(1 1 3)As studied by magnetotransport and ferromagnetic resonance

✍ W. Limmer; M. Glunk; J. Daeubler; T. Hummel; W. Schoch; C. Bihler; H. Huebl; M.S 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 210 KB

Optical investigation of ferromagnetic G

Optical investigation of ferromagnetic Ga1−xMnxN layers grown on sapphire (0 0 0 1) substrates

✍ I.T. Yoon; J.M. Myoung 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 395 KB

AFM observation of OMVPE grown ErP on In

AFM observation of OMVPE grown ErP on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates

✍ T. Kuno; T. Akane; S. Jinno; T. Hirata; Y. Yang; Y. Isogai; N. Watanabe; Y. Fuji 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 294 KB

ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the

Spontaneous Hall effect in MBE grown Fe

Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates

✍ K.-J. Friedland; R. Nötzel; H.-P. Schönherr; A. Riedel; H. Kostial; K.H. Ploog 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 211 KB

The spontaneous Hall e ect in Fe layers epitaxially grown on GaAs(3 1 1)A and GaAs(3 3 1)A substrates is utilised to characterise the electronic and magnetic properties of the layers. We observe a very unusual hysteresis behaviour, which arises from the in-plane magnetisation with the easy axes alon

Photoluminescence investigation of ferro

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

✍ I.T. Yoon; M.H. Ham; J.M. Myoung 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 518 KB

doped GaN layers, 2 mm thick metal organic chemical vapor deposition (MOCVD)-grown GaN templates on sapphire (0 0 0 1) substrates were prepared. The 2 mm GaN buffer layer exhibits ntype and a carrier concentration of 2.5 Â 10 17 cm À3 . The GaMnN films were produced at various Mn-cell temperatures r

Magnetotransport properties of (Ga,Mn)As grown on GaAs (4&#xa0;1&#xa0;1)A substrates

Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates