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Magnetically active vacancy related defects in irradiated GaN layers

✍ Scribed by Kilanski, L.; Tuomisto, F.; Szymczak, R.; Kruszka, R.


Book ID
120311955
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
609 KB
Volume
101
Category
Article
ISSN
0003-6951

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Study of electrically active defects in
✍ C.B. Soh; D.Z. Chi; A. Ramam; H.F. Lim; S.J. Chua πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 319 KB

Deep level defects in both p + /n junctions and n-type Schottky GaN diodes are studied using the Fourier transform deep level transient spectroscopy. An electron trap level was detected in the range of energies at E c Γ€ E t ΒΌ 0:2320:27 eV with a capture cross-section of the order of 10 Γ€19 -10 Γ€16 c