Implantation angle dependent study of va
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M.D.H. Lay; J.C. McCallum; C. Jagadish
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Article
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2003
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Elsevier Science
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English
⚖ 205 KB
The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 À ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va