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Vacancy related defect profiles in MeV cluster-ion irradiated silicon

✍ Scribed by A. Hallén; P. Håkansson; N. Keskitalo; J. Olsson; A. Brunelle; S. Della-Negra; Y. Le Beyec


Book ID
113286822
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
355 KB
Volume
106
Category
Article
ISSN
0168-583X

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The effect of implantation angle on the profile of the vacancy-phosphorus and divacancy centres (VP/V 2 À ) in n-type 0.7-1.1 O cm Cz-grown (1 0 0) Si has been examined using depth profiling with deep-level transient spectroscopy. Samples were mounted with 10 twists from the [1 1 0] direction and va