𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Vacancy-related defects in ion-beam and electron irradiated 6H–SiC

✍ Scribed by V.Ya Bratus’; T.T Petrenko; H.J von Bardeleben; E.V Kalinina; A Hallén


Book ID
108417576
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
174 KB
Volume
184
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Far-action radiation defects and getteri
✍ D. Shustov; V. Kalinin; E. Kalinina; M. Zamoryanskaya 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 249 KB

We report on cathodeluminescence study of radiation defects in silicon carbide implanted by heavy ions of Bi at high energy. Irradiated and annealed samples were measured to investigate radiation defects distribution variation with fluence. It is shown that diffusion and gettering effects are occurr

Frenkel pair accumulation in ion- and el
✍ V.I. Belko; A.Yu. Kuznetsov 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 135 KB

Classical MD simulations have been applied to study the Frenkel pair accumulation in electron-and ion-irradiated SiC for a wide temperature range 20-1200 K using different dose rates, so that ion flux affects significantly the resulting damage levels. Since the range of experimental dose rates is no