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Electron irradiation induced defects in monocrystalline 4H–SiC and 6H–SiC: the influence of the electron energy and doping

✍ Scribed by H.J. von Bardeleben; J.L. Cantin

Book ID: 108417578
Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 175 KB
Volume: 184
Category: Article
ISSN: 0169-4332
DOI: 10.1016/s0169-4332(01)00676-6

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