Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation

✍ Scribed by C.C. Ling; X.D. Chen; M. Gong; C.L. Yang; W.K. Ge; J.N. Wang

• Book ID: 103884224
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 254 KB
• Volume: 376-377
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2005.12.095

✦ Synopsis

6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line ðE A Þ spectrum was created by electron irradiation with electron energy E e X0:3 MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of D I by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the E A and the D I related centers were discussed.