✦ LIBER ✦

High-energy electron irradiation of NdFeB permanent magnets: Dependence of radiation damage on the electron energy

✍ Scribed by Teruhiko Bizen; Yoshihiro Asano; Xavier-Marie Maréchal; Takamitsu Seike; Tsuyoshi Aoki; Kenji Fukami; Naoyasu Hosoda; Hiroto Yonehara; Tetsuya Takagi; Toru Hara; Takashi Tanaka; Hideo Kitamura

Book ID: 108223039
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 455 KB
Volume: 574
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2007.01.185

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Measurement of NdFeB permanent magnets d

Measurement of NdFeB permanent magnets demagnetization induced by high energy electron radiation

✍ Alexander B. Temnykh 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 854 KB

Effects of proton irradiation on electro

Effects of proton irradiation on electronic structure of NdFeB permanent magnets

✍ L. Yang; L. Zhen; C.Y. Xu; X.Y. Sun; W.Z. Shao 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 401 KB

Radiation damage induced by channeling o

Radiation damage induced by channeling of high energy electrons

✍ Fujimoto, F. ;Fujita, H. 📂 Article 📅 1972 🏛 John Wiley and Sons 🌐 English ⚖ 287 KB

Damage effects of high energy electrons

Damage effects of high energy electrons on metals

✍ Wayne E. King; R. Benedek; K.L. Merkle; M. Meshii 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 947 KB

Radiation hardness of different silicon

Radiation hardness of different silicon materials after high-energy electron irradiation

✍ S. Dittongo; L. Bosisio; M. Ciacchi; D. Contarato; G. D'Auria; E. Fretwurst; G. 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 249 KB

Electron energy dependence on inducing t

Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation

✍ C.C. Ling; X.D. Chen; M. Gong; C.L. Yang; W.K. Ge; J.N. Wang 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 254 KB

6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line ðE A Þ spectrum was created by electron irradiation with electron energy E e