X-ray diffraction characterization of mi
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Molodkin, V. B. ;Olikhovskii, S. I. ;Len, E. G. ;Sheludchenko, B. V. ;Lizunova,
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Article
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2011
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John Wiley and Sons
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English
⚖ 564 KB
## Abstract The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) has been performed by methods of the high‐resolution X‐ray diffraction. The concentrations and average