X-ray diffraction characterization of microdefects in silicon crystals after high-energy electron irradiation

✍ Scribed by Molodkin, V. B. ;Olikhovskii, S. I. ;Len, E. G. ;Sheludchenko, B. V. ;Lizunova, S. V. ;Kyslovs'kyy, Ye. M. ;Vladimirova, T. P. ;Kochelab, E. V. ;Reshetnyk, O. V. ;Dovganyuk, V. V. ;Fodchuk, I. M. ;Lytvynchuk, T. V. ;Klad'ko, V. P. ;Świątek, Z.

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 564 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201184253

✦ Synopsis

Abstract

The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) has been performed by methods of the high‐resolution X‐ray diffraction. The concentrations and average sizes of dislocation loops and oxygen precipitates have been determined by using the combined treatment of reciprocal space maps and rocking curves based on the analytical formulas of the statistical dynamical theory of X‐ray diffraction by imperfect crystals with randomly distributed microdefects of several types.