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Mechanisms of changes of hole concentration in Al-doped 6H-SiC by electron irradiation and annealing

✍ Scribed by Hideharu Matsuura; Hideki Yanagisawa; Kozo Nishino; Yoshiko Myojin; Takunori Nojiri; Yukei Matsuyama; Takeshi Ohshima

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 250 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.08.192

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