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Mechanisms of reduction in hole concentration in Al-doped 4H-SiC by electron irradiation

✍ Scribed by Hideharu Matsuura; Sou Kagamihara; Yuji Itoh; Takeshi Ohshima; Hisayoshi Itoh

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 107 KB
Volume: 83
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2005.10.015

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From the temperature dependence of the hole concentration in lightly Al-doped 4H-SiC epilayers, a shallow acceptor with E V þ 0:2 eV, which is an Al atom ðAl Si Þ at a Si sublattice site, and an unknown deep defect with E V þ 0:35 eV are found, where E V is the valence band maximum. In unirradiated