Far-action radiation defects and gettering effects in 6H-SiC irradiated with Bi ions

✍ Scribed by D. Shustov; V. Kalinin; E. Kalinina; M. Zamoryanskaya

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 249 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.182

✦ Synopsis

We report on cathodeluminescence study of radiation defects in silicon carbide implanted by heavy ions of Bi at high energy. Irradiated and annealed samples were measured to investigate radiation defects distribution variation with fluence. It is shown that diffusion and gettering effects are occurred during irradiation. The data show that defect distribution depend on irradiation ion fluence drastically.