We report on cathodeluminescence study of radiation defects in silicon carbide implanted by heavy ions of Bi at high energy. Irradiated and annealed samples were measured to investigate radiation defects distribution variation with fluence. It is shown that diffusion and gettering effects are occurr
โฆ LIBER โฆ
Detection Properties and Radiation Damage Effects in SiC Diodes Irradiated with Light Ions
โ Scribed by G. Raciti; M. De Napoli; F. Giacoppo; E. Rapisarda; C. Sfienti
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 355 KB
- Volume
- 834
- Category
- Article
- ISSN
- 0375-9474
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