When amorphous SiO 2 films are bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (peroxy radicals POR, oxygen deficient centres (ODC), non-bridging oxygen hole centres (NBOHC), E 0 centres, etc.). The intensity of the electroluminescence (E
β¦ LIBER β¦
Defect-engineering in SiC by ion implantation and electron irradiation
β Scribed by G. Pensl; F. Ciobanu; T. Frank; D. Kirmse; M. Krieger; S. Reshanov; F. Schmid; M. Weidner; T. Ohshima; H. Itoh; W.J. Choyke
- Book ID
- 108207534
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 220 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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