Defect engineering in the MOSLED structure by ion implantation

✍ Scribed by S. Prucnal; A. Wójtowicz; K. Pyszniak; A. Drozdziel; J. Zuk; M. Turek; L. Rebohle; W. Skorupa

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 330 KB
• Volume: 267
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2009.01.163

✦ Synopsis

When amorphous SiO 2 films are bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction (peroxy radicals POR, oxygen deficient centres (ODC), non-bridging oxygen hole centres (NBOHC), E 0 centres, etc.). The intensity of the electroluminescence (EL) from oxygen deficiency centres at 2.7 eV, non-bridging oxygen hole centres at 1.9 eV and defect centres with emission at 2.07 eV can be easily modified by the ion implantation of the different elements (H, N, O) into the completely processed MOSLED structure. Nitrogen implanted into the SiO 2 :Gd layer reduces the concentration of the ODC and NBOHC while the doping of the oxygen increases the EL intensity observed from POR defect and NBOHC. Moreover, after oxygen or hydrogen implantation into the SiO 2 :Ge structure fourfold or fifth fold increase of the germanium related EL intensity was observed.