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Defect engineering via ion implantation to control B diffusion in Si

โœ Scribed by M. Canino; G. Regula; M. Xu; E. Ntzoenzok; B. Pichaud


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
625 KB
Volume
159-160
Category
Article
ISSN
0921-5107

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He implantation in Si for B diffusion co
โœ E. Bruno; S. Mirabella; E. Napolitani; F. Giannazzo; V. Raineri; F. Priolo ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 176 KB

A definitive method to prevent undesired phenomena related to B implantation in crystalline Si is still lacking. In fact, B undergoes enhanced diffusion, clustering and electrical deactivation as a consequence of interaction with implantation related damage. In this work we investigated the effect o