He implantation in Si for B diffusion co
โ
E. Bruno; S. Mirabella; E. Napolitani; F. Giannazzo; V. Raineri; F. Priolo
๐
Article
๐
2007
๐
Elsevier Science
๐
English
โ 176 KB
A definitive method to prevent undesired phenomena related to B implantation in crystalline Si is still lacking. In fact, B undergoes enhanced diffusion, clustering and electrical deactivation as a consequence of interaction with implantation related damage. In this work we investigated the effect o