✦ LIBER ✦
7555. Defect and majority carrier distribution in silicon resulting from Ar+/Si+, B+ and As+ ion implantation and annealing: N N Gerasimenko et al,Nucl Instrum Meth Phys Res,B51, 1990, 25–29
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 153 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0042-207X
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