Ion-beam and low-energy positron-beam techniques have been used to study damage and implanted ion distributions and their annealing behavior in semi-insulating GaAs after the room temperature implantation of 3 Γ 10~-1 x 10 ~7 60 keV H' cm -'. The redistribution of the implanted H during annealing wa
β¦ LIBER β¦
Defect Formation in LiF by Low Energy Ion Implantation
β Scribed by C. N. Afonso; C. Ortiz; G. J. Clark
- Publisher
- John Wiley and Sons
- Year
- 1985
- Tongue
- English
- Weight
- 763 KB
- Volume
- 131
- Category
- Article
- ISSN
- 0370-1972
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