Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation

✍ Scribed by P. Normand; D. Tsoukalas; E. Kapetanakis; J.A. Van Den Berg; D.G. Armour; J. Stoemenos

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 271 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00019-1

✦ Synopsis

Thin thermally grown silicon oxides are implanted with a high dose of silicon using very low energy ion implantation. After high temperature annealing, the oxides are observed by Transmission Electron Microscopy which reveals the existence of silicon nano-crystals. The electrical properties of metal-oxide-semiconductor devices are then investigated using dynamic conductance as well as dc current measurements.