✦ LIBER ✦
ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low-Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient.
✍ Scribed by W. Lerch; M. Glueck; N. A. Stolwijk; H. Walk; M. Schaefer; S. D. Marcus; D. F. Downey; J. W. Chow
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 31 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0931-7597
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