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Production of vacancy defects in high-energy Sn-ion irradiated GaN—Positron beam Doppler broadening study

✍ Scribed by P. Premchander; S. Abhaya; K. Sivaji; G. Amarendra; K. Baskar; Y.T. Lee


Book ID
108239049
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
203 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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