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Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films

✍ Scribed by V.V Emtsev; V.Yu Davydov; V.V Lundin; D.S Poloskin; J Aderhold; H Klausing; D Mistele; T Rotter; J Stemmer; F Fedler; O Semchinova; J Graul

Book ID
118532166
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
202 KB
Volume
210
Category
Article
ISSN
0022-0248

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