Electrical characterization and annealing properties of electrically active defects introduced in n-Si during sputter etching in an Ar-plasma

✍ Scribed by P.N.K Deenapanray; F.D Auret; G Myburg

• Book ID: 114171077
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 195 KB
• Volume: 148
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(98)90666-8